| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface protection film for semiconductor devices which is superior in water penetration resistance and etching resistance and not vulnerable to electric influences of impurity ions intruding from the outside. SOLUTION: A first oxide film is formed on an IC substrate 1, an SiO2 grain film having a high porosity is formed on the first oxide film, and a second oxide film and an NiO are formed on the SiO2 grain film. Owing to the SiO2 grain film, a surface protection film having a low permittivity is obtained.
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