| 摘要 |
PROBLEM TO BE SOLVED: To prevent performance degradation caused by change in the thermoelectric semiconductor material composition caused by oxidation by suppressing oxidation, related to a method or a thermoelectric semiconductor. SOLUTION: A thermoelectric semiconductor is plastic-worked in such atmospheric environment with oxygen concentration 10,000 ppm or below. With oxygen concentration 10,000 ppm or below, the performance degradation due to oxidation of a thermoelectric semiconductor is significantly suppressed. |
