发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which an appropriate amount of adhesive layer can be formed conveniently on the rear surface of an ultra-thin chip, crackings of chip, chip cracks and package cracks prevented, and the efficiency of production improved. SOLUTION: A groove, whose cut depth is smaller than the thickness of a wafer, is formed from the surface of the wafer in which a semiconductor circuit is formed, and a surface protection sheet is adhered to the surface of the semiconductor circuit, and the rear surface of the semiconductor wafer is ground to make the wafer smaller in thickness and divide it into chips finally. In addition, a dicing die bond sheet composed of a base material and an adhesive layer formed thereon is adhered to the grinding surface, and the surface protection sheet is peeled off and the adhesive layer of the dicing die bond sheet exposing between the chips is cut, and then the adhesive layer is peeled off from the base material together with the chip, and the chip is fixed onto the specified base, by using the adhesive layer.</p>
申请公布号 JP2001156027(A) 申请公布日期 2001.06.08
申请号 JP19990340334 申请日期 1999.11.30
申请人 LINTEC CORP 发明人 SUGINO TAKASHI;SENOO HIDEO
分类号 H01L23/12;H01L21/301;H01L21/304;H01L21/52;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 主分类号 H01L23/12
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