| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicide structure which is more improved in quality and where a leakage current is prevented from occurring. SOLUTION: A method of manufacturing a silicide structure is that the silicide structure is self-aligned and prevented from increasing in sheet resistance due to a reduction in a wire width by taking advantage of the specific characteristic of cobalt in which cobalt moves downward to react on silicon atoms. Furthermore, the characteristics of silicon atom in which silicon atoms move upward to react on titanium is also utilized. Titanium induces the upward movement of silicon atoms. A titanium layer is used as a barrier layer, by which cobalt acts less on silicon atoms, and a leakage current is prevented. A silicide multilayered structure is kept stable in resistance and capable of preventing a leakage current from occurring.
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