SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor layer element, in which an end face is difficult to deteriorate and which has high reliability on driving. SOLUTION: An Al2O3 film having a stoichiometric composition of resistivity of 1×1012Ω.m or more, preferably 1×1013Ω.m or more is used as a low reflecting film 18 coated and formed to one of the end faces of a resonator in the semiconductor laser element. The Al2O3 film is formed particularly by an electron cyclotron resonance plasma sputtering method. The semiconductor laser element being proper for usage as a light source for optical communication and having a long operation lifetime is realized by inhibiting the lowering of an optical output in the case of driving by a constant current by suppressing the deterioration of an end face.