| 摘要 |
PROBLEM TO BE SOLVED: To realize a storage device, even though it has a large capacity and high integration level and a small wiring amount. SOLUTION: First wiring and second wiring and third wiring are formed on a three planes orthogonally crossing in a three-dimensional space, and storage elements are formed at the cross points of each wiring. Data D (i, j, k), represented by a three-dimensional matrix, are stored in storage elements formed at the cross points of an i-th first wiring and a j-th second wiring and a k-th third wiring. The storage element is constituted of a transistor and an electrostatic capacity. The transistor is formed as a thin-film transistor. The thin-film transistor is formed under a 600 deg.C or lower low-temperature process. The transistor is formed by peeling the transistor, formed temporarily on peeling substrate and transferring it to the other substrate. |
