| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of impressing a bias voltage to an optical semiconductor element, and capable of efficiently releasing a photocarrier generated in a semiconductor layer to the outside part of the optical semiconductor element. SOLUTION: An optical module 100 is provided with on EA modulator 102 and a short circuit 104. When an optical signal modulated by a high speed signal is made incident on an EA modulator 102 to which a bias voltage is impressed, optical currents according to the strength of the optical signal are generated in the absorbing layer of the EA modulator 105. The high frequency components of the optical currents are allowed to flow from an upper electrode 102a of the EA modulator 102 to a short circuit 104. In the short circuit 103, a capacitor C1 turns the upper electrode 102a into a grounded state against the high frequency power of a frequency f1, and a capacitor C2 turns the upper electrode 102a into a grounded state against the high frequency power of a frequency f2, and a capacitor C3 turns the upper electrode 102a into a grounded state against the high frequency power of a frequency f3.</p> |
