| 摘要 |
PROBLEM TO BE SOLVED: To control damages on a base layer by removing a resist surface hardening layer without causing drop of throughput and increase in facility cost due to the increase in the number of manufacturing steps. SOLUTION: A side A of the upper electrode change-over switch 12 is defined as the connecting condition, while a side B as the nonconnecting condition and a second interlayer film is etched using an etching gas, including fluorocarbon-based gas. Thereafter, the side A of such upper electrode change- over switch 12 is defined as being in the nonconnecting condition, while the side B as in connecting condition. An upper electrode 2 is grounded and a lower voltage is applied only to a lower electrode holder 10, to generate a plasma 11 using only the fluorocarbon-based gas. The first interlayer film is etched with the plasma 11 generated in this case, and moreover the resist surface hardening layer is removed with F-radical dissociated from the fluorocarbon-based gas. In addition, since the incident energy of ion is rather low, etching can be realized under the low damage condition with respect to the base layer.
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