| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for controllably forming a silicon nano structure, such as the silicon quantum fine line arrangement. SOLUTION: A silicon surface is sputtered, so that undulation recess portion forms periodical vertical portion of the same depth as the boundary of the silicon-insulator of an SOI material due to the uniform flow of nitrogen molecular ions in a ultra-high vacuum condition. Ion energy, ion incident angle to the surface of material, temperature of silicon layer, forming depth of the vertical portion, height of vertical portion and ion passing range to silicon are all determined with reference to the wavelength of the selected waving (vertical) portion in the range of 9 nm to 120 nm. A nitride silicon mask, having projected edges, is used to define the region of the silicon surface where allocation is formed. Before sputtering, impurity can be removed from the silicon surface within the mask window.
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