| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile ferroelectric memory element that simplifies processes, is thin, and has less capacitor connection, and its manufacturing method. SOLUTION: A split word lid configuration without using any plate lines is formed, and a capacitor is formed at a trench provided at an insulation layer that is formed on a substrate so that a transistor can be insulated while the first electrode directly comes into contact with the substrate. Also, the gate electrode of the transistor is formed only at the part of the gate of the transistor. Then, the gate electrode of the transistor of the first cell and the capacitor of the second cell are aligned in the direction of the word line, and the gate electrode of the transistor and the second electrode of the capacitor of the second cell are connected by a common line.
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