METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To etch an aluminum oxide and a silicon oxide film formed thereon with the same etchant in accordance with selectivity to a wiring made of an aluminum film. SOLUTION: Using the same etchant containing ethylene glycol added 16-30 vol% (preferably 20-22 vol%) to a buffered hydrofluoric acid water solution, the aluminum oxide and the silicon oxide film formed thereon are etched in accordance with selectivity to the wiring made from the aluminum film. Thus, a good electric conduction of the wiring made from the aluminum film to other wirings is ensured.