METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which has a manufacturing process capable of forming a silicon oxide film at a low temperature. SOLUTION: In the manufacturing process capable of forming a silicon oxide film at a low temperature, the silicon oxide film is formed by the thermal CVD method using bis-tertiary butylaminosilane and O2 as raw material gases.