PLASMA PROCESSING APPARATUS AND PROCESS USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching apparatus that can evenly maintain pressure distribution on a substrate to be processed, plasma density created to a surface of the substrate without rotation of magnetic field creating means, and self-biasing voltage potential to perform evenly etching proves without charge-up damage, and provide sputter apparatus in which stress is not generated. SOLUTION: The plasma processing apparatus of the present invention includes a first electrode 102 for loading a substrate 101 to be plasma processing, and magnetic field creating means is mounted toward a surface to be plasma processed. A secondary electrode 104 is provide at the first electrode 102. The plasma is excited around the secondary electrode 104 drift of electron in the plasma is generated from an outer surface 106 of the secondary electrode to an inner surface 105 thereof and further from the inner surface 105 to the outer surface 106.