| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a compound semiconductor layer formed on a compound semiconductor substrate can not be transferred onto a silicon substrate of large area. SOLUTION: A stripe-like selective growth mask, a second buffer layer, an AlxGa1-xAs (0.9<=x<=1) layer, and a compound semiconductor layer are formed sequentially on a first buffer layer formed on a compound semiconductor substrate. The second buffer layer, the AlxGa1-xAs (0.9<=x<=1) layer, and the compound semiconductor layer are then etched partially in stripe shape in a direction intersecting the stripe direction of the selective growth mask and an InyGa1-yAs (0.05<=y<=0.6) layer is formed on a silicon substrate. After bonding the compound semiconductor layer on the compound semiconductor substrate and the InyGa1-yAs (0.05<=y<=0.6) layer on the silicon substrate, the AlxGa1-xAs (0.9<=x<=1) layer is etched to strip the compound semiconductor substrate. In such a method for forming a compound semiconductor substrate, the stripe direction of the selective growth mask is set in the [011] or [0-11] direction of the compound semiconductor substrate. |
