发明名称 METHOD AND DEVICE FOR FORMING SEMICONDUCTOR LAYERS IN LAYER
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and a device for forming semiconductor layers in layer having such flexibilities as a plurality of different kinds of semiconductor layer can be formed mixedly when the semiconductor layers of a solar cell are formed by inline system and another kind of semiconductor layer can be formed during maintenance of a chamber for forming one kind of semiconductor layer. SOLUTION: The method for forming semiconductor layers of specified structure sequentially on a substrate while moving the substrate sequentially through a plurality of film forming chambers comprises a step for determining one of a plurality of film forming chambers which the substrate enters next, and/or a step for taking in the substrates coming from the plurality of film forming chambers sequentially. The step for determining a film forming chamber and the step for taking in the substrates sequentially are basically carried out in a branch chamber and a collective chamber, respectively, and the film forming chambers can serve as the branch chamber and collective chamber.</p>
申请公布号 JP2001155999(A) 申请公布日期 2001.06.08
申请号 JP19990333722 申请日期 1999.11.25
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 OKAMOTO KEIJI;YOSHIMI MASASHI
分类号 H01L21/205;C23C16/44;H01L31/04;(IPC1-7):H01L21/205 主分类号 H01L21/205
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