发明名称 |
METHOD AND DEVICE FOR FORMING SEMICONDUCTOR LAYERS IN LAYER |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and a device for forming semiconductor layers in layer having such flexibilities as a plurality of different kinds of semiconductor layer can be formed mixedly when the semiconductor layers of a solar cell are formed by inline system and another kind of semiconductor layer can be formed during maintenance of a chamber for forming one kind of semiconductor layer. SOLUTION: The method for forming semiconductor layers of specified structure sequentially on a substrate while moving the substrate sequentially through a plurality of film forming chambers comprises a step for determining one of a plurality of film forming chambers which the substrate enters next, and/or a step for taking in the substrates coming from the plurality of film forming chambers sequentially. The step for determining a film forming chamber and the step for taking in the substrates sequentially are basically carried out in a branch chamber and a collective chamber, respectively, and the film forming chambers can serve as the branch chamber and collective chamber.</p> |
申请公布号 |
JP2001155999(A) |
申请公布日期 |
2001.06.08 |
申请号 |
JP19990333722 |
申请日期 |
1999.11.25 |
申请人 |
KANEGAFUCHI CHEM IND CO LTD |
发明人 |
OKAMOTO KEIJI;YOSHIMI MASASHI |
分类号 |
H01L21/205;C23C16/44;H01L31/04;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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