| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the difficulty where since the conventional analysis method does not have a special resolution required for a two-dimensional or three- dimensional element analysis, it is difficult to measure impurity amount in a semiconductor in a fine part. SOLUTION: A silicon semiconductor substrate 13 is cut down as a first thin film, to a degree that its thickness can be observed by a transmission electronic microscope, and the first thin film is etched by the use of a mixture liquid composed of a hydrofluoric acid and a nitric acid, and a film thickness of a second thin film changes in correspondence to an impurity concentration distribution of a diffusion layer 19 in the silicon semiconductor substrate, and is measured by an equal thickness interference fringe observing method (c) by use of the transmission electronic microscope, and from the film thickness of the second thin film acquired by the equal thickness interference fringe observing method (c), the impurity concentration distribution of the diffusion layer 19 in the silicon semiconductor substrate is acquired.</p> |
