MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element wherein a power required for recording is reduced even when an element size is reduced while a range for material selection is wide. SOLUTION: A magneto-resistance effect element having a ferromagnetic double tunnel joint is provided where first anti-ferromagnetic layer 1/first ferromagnetic layer 2/first tunnel insulating layer 3/second ferromagnetic layer 4/first non-magnetic layer 5/third ferromagnetic layer 6/second non-magnetic layer 7/fourth ferromagnetic layer 8/second tunnel insulating layer 9/fifth ferromagnetic layer 10/second anti-ferromagnetic layer 11 are laminated. Here, the second and third ferromagnetic layers 4 and 6 are anti-ferromagnetic-combined through the first non-magnetic layer 5 while the third and fourth ferromagnetic layers 6 and 8 are anti-ferromagnetic-combined through the second non-magnetic layer 7.