| 摘要 |
PROBLEM TO BE SOLVED: To reduce manufacturing costs by simplifying the manufacturing process of a semiconductor element and to improve the reliability and process yield of the semiconductor element by preventing the defect in the process. SOLUTION: A plurality of MOS(metal oxide semiconductor) elements including a source, drain, and gate electrode are formed at the upper portion of a semiconductor substrate for manufacturing a semiconductor element, a first insulation film is formed at the upper portion of the semiconductor substrate including the MOS elements, a moat pattern is formed at the upper portion of the first insulation film so that the first insulation film corresponding to the separation region of the MOS elements can be exposed, the moat pattern is used as a mask, the exposed first insulation film and the semiconductor substrate at a specific depth being located at the lower portion of the exposed first insulation film is etched for forming a trench, a second insulation film is formed at the upper portion of the first insulation film including the etched semiconductor substrate, and the trench is buried, thus manufacturing the semiconductor element.
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