SILICON SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a high accuracy through-hole that is formed in an insulating layer of a silicon substrate and a method for etching with high accuracy for obtaining it. SOLUTION: A magnetic layer comprising 3d metal is interposed between insulating layer and an Au conductor layer that stops etching. The insulating layer and the magnetic layer are removed simultaneously by etching, while magnetic properties of the overall silicon substrate is measured, to detect the end point of etching.