SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has high mechanical strength and superior heat radiation characteristics. SOLUTION: A contact part 11 and via holes 14a and 14b of 1st-3rd layers among wiring layers formed on a silicon substrate 10 are formed of tungsten and wirings 13a-13c of the 1st-3rd layers are formed of copper through single damascene machining. The via-holes 15a-15c of 4th-6th layers are formed of tungsten and the wirings 13d-13f of the 4th-6th layers are formed of copper by dual damascene machining. Furthermore, the diameters of the via-holes 15a-15c of the 4th-6th layers are not less than 12.9 times the diameters of the contact part 11 an the via-holes 14a and 14b of the 1st-3rd layers.