发明名称 INNER STRIPE LASER DIODE STRUCTURE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide refractive index guide-type inner stripe nitride laser diode structure. SOLUTION: The inner stripe nitride laser diode structure is provided with a multiple-quantum well layer and first and second surfaces, and is provided with a waveguide layer where the first surface is in contact with the multiple- quantum well layer, and a current-blocking layer entering the second surface of the waveguide layer and divided into two portions by a stripe groove. The current-blocking layer can be made of a short-period superlattice.
申请公布号 JP2001156404(A) 申请公布日期 2001.06.08
申请号 JP20000342899 申请日期 2000.11.10
申请人 XEROX CORP 发明人 KNEISSL MICHAEL;BOUR DAVID P;ROMANO LINDA T;KRUSOR BRENT S;NOBLE M JOHNSON
分类号 H01S5/22;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01S5/343 主分类号 H01S5/22
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