发明名称 |
INNER STRIPE LASER DIODE STRUCTURE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide refractive index guide-type inner stripe nitride laser diode structure. SOLUTION: The inner stripe nitride laser diode structure is provided with a multiple-quantum well layer and first and second surfaces, and is provided with a waveguide layer where the first surface is in contact with the multiple- quantum well layer, and a current-blocking layer entering the second surface of the waveguide layer and divided into two portions by a stripe groove. The current-blocking layer can be made of a short-period superlattice.
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申请公布号 |
JP2001156404(A) |
申请公布日期 |
2001.06.08 |
申请号 |
JP20000342899 |
申请日期 |
2000.11.10 |
申请人 |
XEROX CORP |
发明人 |
KNEISSL MICHAEL;BOUR DAVID P;ROMANO LINDA T;KRUSOR BRENT S;NOBLE M JOHNSON |
分类号 |
H01S5/22;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01S5/343 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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