| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a damascene FSG film having a good adhesion to silicon nitride in the HDP-CVD system. SOLUTION: Silane SiH4, silicon tetrafluoride SiF4, oxygen O2 and argon Ar are used as reactive gases. SiH4 reacts with SiF4 to produce FSG. Ar is introduced to accelerate the gas dissociation, all the four gases are used almost for deposition, and SiH4 is not used during depositing of an interface part of the FSG film. For depositing silicon nitride on the topside of the FSG film, the interface part designates a topmost part, while for depositing the FSG on the topside of silicon nitride, the interface part designates a bottom part. Use of SiH4 together with SiF4 shows the tendency of relaxing the decomposition effect of SiF4 over the most of deposition. By removing SiH4 from the deposition of the interface part of the FSG film, less hydrogen is taken in a film existing at the interface region to improve the adhesion to silicon nitride existing above or below it.
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