| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which an extreme-thin chip can be manufactured with a high yield, an appropriate amount of adhesive layer formed conveniently on the rear surface thereof, crackings of chip, chip cracks and package cracks prevented, and the efficiency of production improved. SOLUTION: A groove, whose cut depth is smaller than the thickness of a wafer, is formed from the surface of the wafer in which a semiconductor circuit is formed, a surface protective sheet is adhered to the surface of the semiconductor circuit, and the rear surface of the semiconductor wafer is ground to make the wafer smaller in thickness, and then a dicing die bond sheet composed of a mase material and an adhesive layer formed thereon is adhered to the grinding surface, and further the surface protection sheet is peeled off and the groove is further ground, and finally the wafer is divided into chips. In addition, the adhesive layer of the dicing die bond sheet is cut, the adhesive layer is peeled off from the base material of the dicing die bond sheet together with the chip, and the chip is fixed onto the specified base by using the adhesive layer. |
