| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit that can realize high speed processing and low power consumption while minimizing the manufacturing cost and increase in a layout area. SOLUTION: A bias voltage supply circuit consisting of pMOS transistors(TRs) P2, P3 whose sources receive different voltages and whose gates receive a mode control signal, generates a bias voltage of a different level depending on the mode control signal and supplies the voltage to an n-well of the pMOS TRs. The drive current of the TRs in an operating state can be maintained high by supplying the bias voltage of nearly the same level as the operating voltage to the n-well of the pMOS TR in an operating state and supplying the bias voltage higher than the operating voltage to the n-well of the pMOS TR in a standby state so as to suppress a leakage current of the TRs in the standby state thereby realizing high-speed processing and low power consumption.
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