| 摘要 |
PROBLEM TO BE SOLVED: To provide a jointing method of silicon wafers, which pauses no risk of flaking at jointing interfaces, by reducing voids when silicon substrates are jointed. SOLUTION: When a first silicon substrate 1 having circuit element 3 formed thereon and a second silicon substrate 11 as a base stage are jointed, a diffusion preventive layer 4 for preventing diffusion of Au is formed on the first silicon substrate 1. An Au layer 5 is formed thereon, a diffusion preventive layer 4 for preventing diffusion of Au is formed on the second silicon substrate 11, and a polysilicon layer 14 is formed thereon. The Au layer 5 of the first silicon substrate 1 and the polysilicon layer 14 of the second silicon layer 11 are overlapped, and a prescribed load is applied thereto, at a temperature of Au-Si eutectic temperature or higher to joint the silicon substrates 1 and 11. The diffusion layer is made of a metal thin film, silicon oxide film, silicon nitride film, SiC layer, alumina layer, boron layer or Au-rich layer. |
