| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device in which a lack of uniformity in spectral intensity of the transmitted light due to a lack of uniformity in the thickness of a second insulating film is restrained from occurring, by a method wherein a third insulating film possessed of optical characteristics is interposed between a first and a second insulating film, so as to restrain a conventional light reflecting interface from being formed and its manufacturing method. SOLUTION: Photoelectric conversion devices are formed on a semiconductor substrate, a first insulating film and a second insulating film whose light refractive index is different from that of the first insulating film are provided on the photoelectric conversion devices for the formation of a solid-state image pickup device, where a third insulating film is interposed between the first and second insulating film, and the third insulating film is equipped with a region whose refractive index changes continuously from that of the first insulating film to that of the second insulating film.
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