| 摘要 |
PROBLEM TO BE SOLVED: To improve insertion loss characteristics of a high-frequency switch in a high-frequency circuit. SOLUTION: In a high-frequency switch, constituted of a finger-type MOSFET formed on an Si substrate, a p+-type well contact region 105 for applying a fixed potential to a p-type well 102 is formed in an element isolation layer 101, and a capacitor 109 is formed between the p+ well contact region 105 and the p-type well.
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