METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To eliminate abnormal increase of leak current during OFF operation by increasing the gettering rate of a catalytic element. SOLUTION: An a-Si film 3 is formed on a glass substrate 1. A mask 4 having a linear through hole region 5 is formed on the a-Si film 3 and nickel 6 is introduced through the through hole region 5 and grown in the lateral direction. Subsequently, a mask 4 is patterned again, the through hole region 5 and a growth boundary part 3c are opened and a mask 47 larger than the active region of a TFT is formed followed by ion doping of phosphorus 7. The nickel 6 in a crystalline silicon film 3b beneath the mask 4' is thereby gettered and the concentration of nickel is decreased significantly to about 5×1016 atoms/cm3 thus obtaining a TFT in which abnormal increase of leak current is eliminated thoroughly during OFF operation.