ANALYTICAL METHOD FOR METAL IMPURITIES ON SURFACE OF SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To obtain an analytical method in which metal impurities on the surface of a silicon substrate are analyzed with high sensitivity without being influenced by a change with the passage of time in the silicon substrate as a standard sample or a sample to be measured or without being influenced by an oxide film on the surface of the substrate. SOLUTION: Before the metal impurities 16 existing on the surface of the silicon substrate 13 are quantitatively analyzed by a total reflection X-ray fluorescence method, hydrofluoric acid vapor is brought into contact with the surface of the substrate 13 for one to ten minutes. The silicon substrate 13 may be the standard sample in which a metal contamination amount on the surface of the substrate 13 is known or may be the sample to be measured.