发明名称 SEMICONDUCTOR PRESSURE SENSOR AND ITS PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor capable of improving sensitivity without enlarging the chip area of the sensor. SOLUTION: In a semiconductor pressure sensor having a diaphragm 2 displaced by pressure and a piezoelectric resistor 3 changing the resistance value by the displacement of the diaphragm 2 and detecting pressure under the variation of the resistance value of the piezoelectric resistance 3, a groove structure 6 is formed in at least either of the piezoelectric resistance 3 forming part of the diaphragm 2 surface or the back surface of the piezoelectric resistance 3 forming part.
申请公布号 JP2001153742(A) 申请公布日期 2001.06.08
申请号 JP19990334679 申请日期 1999.11.25
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 MIYAJIMA HISAKAZU;EDA KAZUO;AOKI AKIRA
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
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