发明名称 |
SEMICONDUCTOR PRESSURE SENSOR AND ITS PRODUCTION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor capable of improving sensitivity without enlarging the chip area of the sensor. SOLUTION: In a semiconductor pressure sensor having a diaphragm 2 displaced by pressure and a piezoelectric resistor 3 changing the resistance value by the displacement of the diaphragm 2 and detecting pressure under the variation of the resistance value of the piezoelectric resistance 3, a groove structure 6 is formed in at least either of the piezoelectric resistance 3 forming part of the diaphragm 2 surface or the back surface of the piezoelectric resistance 3 forming part.
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申请公布号 |
JP2001153742(A) |
申请公布日期 |
2001.06.08 |
申请号 |
JP19990334679 |
申请日期 |
1999.11.25 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
MIYAJIMA HISAKAZU;EDA KAZUO;AOKI AKIRA |
分类号 |
G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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