| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a silicon nitride film with little defect in the film and having little leak current wherein the concentration and the distribution of other atoms such as oxygen in the film and the film thickness are controlled. SOLUTION: For forming the silicon nitride film on a semiconductor substrate 4, molecules 8 of a compound containing at least one kind of elements selected among O, Cl and F, molecules 9 of a compound containing Si, and excited nitrogen 7 are independently supplied and first mixed on the semiconductor substrate 4 surface.
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