| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device which can suppress dishing in a pad region through a CMP step to realize suitable photolithography and etching step, and also to provide a method for manufacturing the semiconductor device. SOLUTION: A pad region 1 is a wiring end formed simultaneously with a wiring structure flattened by chemical mechanical polishing(CMP) in the semiconductor device. A conductive layer 3 made of mainly a Cu-plated film is formed and flattened in a stepped recess of an interlayer insulating film 2. A plurality of projections 4 (made of the same SiO2 film as the interlayer insulating film 2) are formed in the interior of the stepped recess in the film 2 to the halfway of the step difference. The pad region 1 is flattened by covering all the projections 4 with the conductive layer 3 (barrier metal and Cu-plated film) and burying the recess with the conductive layer to eliminate the step difference with the insulating film 2.
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