发明名称 |
Production of deep trench capacitor comprises patterning substrate having hard mask layer and insulating layer to form trench, thermally treating after doping and forming dielectric capacitor layer and conducting layers |
摘要 |
Production of a deep trench capacitor comprises preparing a substrate having a hard mask layer and an insulating layer; patterning the mask layer and the insulating layer to form a trench with side walls; forming an insulating layer within the trench; forming an intermediate layer made of hard metal on the side walls; removing the insulating layer; forming a doping layer; thermally treating to form a doped region in the substrate, the doped region acting as a storage electrode; forming a dielectric capacitor layer above the storage electrode; forming a first conducting layer to fill the trench and forming a second conducting layer above the first conducting layer.
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申请公布号 |
DE19956978(A1) |
申请公布日期 |
2001.06.07 |
申请号 |
DE19991056978 |
申请日期 |
1999.11.26 |
申请人 |
PROMOS TECHNOLOGIES, INC.;MOSEL VITELIC INC., HSINCHU;SIEMENS AG |
发明人 |
SHIAO, J. S.;YEN, WEN-PING |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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