发明名称 Production of deep trench capacitor comprises patterning substrate having hard mask layer and insulating layer to form trench, thermally treating after doping and forming dielectric capacitor layer and conducting layers
摘要 Production of a deep trench capacitor comprises preparing a substrate having a hard mask layer and an insulating layer; patterning the mask layer and the insulating layer to form a trench with side walls; forming an insulating layer within the trench; forming an intermediate layer made of hard metal on the side walls; removing the insulating layer; forming a doping layer; thermally treating to form a doped region in the substrate, the doped region acting as a storage electrode; forming a dielectric capacitor layer above the storage electrode; forming a first conducting layer to fill the trench and forming a second conducting layer above the first conducting layer.
申请公布号 DE19956978(A1) 申请公布日期 2001.06.07
申请号 DE19991056978 申请日期 1999.11.26
申请人 PROMOS TECHNOLOGIES, INC.;MOSEL VITELIC INC., HSINCHU;SIEMENS AG 发明人 SHIAO, J. S.;YEN, WEN-PING
分类号 H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/8242
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