| 摘要 |
A semiconductor device is provided which is capable of removing the heavy metal impurity in a SOI layer by gettering, and realizing an improvement in breakdown voltage and reliability. The semiconductor device (50) comprises polysilicon regions (17, 18) functioning as a gettering site, which are selectively formed in a buried fashion, such as to make no contact with a gate insulating film (6) and an element isolation insulating film (11), in a main surface of part of a SOI layer (4) where a drain region (8) and a source region (9) are disposed; and contact holes (13, 15) being filled with polysilicon plug functioning as a gettering site, and extending through an interlayer insulating film (12) between an upper surface of the interlayer insulating film (12) and an upper surface of the polysilicon regions (17, 18).
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