发明名称 |
SILICON ON III-V SEMICONDUCTOR BONDING FOR MONOLITHIC OPTOELECTRONIC INTEGRATION |
摘要 |
In a method for bonding a silicon substrate to a III-V material substrate, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g. at a temperature of between about 150 DEG C and about 350 DEG C. The silicon substrate is then thinned. This bonding process enables the fabrication of thick, strain-sensitive and defect-sensitive optoelectronic devices on the optimum substrate for such, namely, a thick III-V material substrate, while enabling the fabrication of silicon electronic devices in a thin silicon layer, resulting from the thinned Si substrate, that is sufficient for such fabrication but which has been thinned to eliminate thermally-induced stress in both the Si and III-V materials. The III-V material substrate thickness thereby provides the physical strength of the composite substrate structure, while the thinned silicon substrate minimizes stress in the composite structure.
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申请公布号 |
WO0106546(A3) |
申请公布日期 |
2001.06.07 |
申请号 |
WO2000US19455 |
申请日期 |
2000.07.14 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
FONSTAD, CLIFTON, G., JR.;LONDON, JOANNA, M.;AHADIAN, JOSEPH, F. |
分类号 |
G02B6/124;H01L21/18;H01L21/20;H01L21/762;H01L21/8252;H01L21/8258;H01L27/06;(IPC1-7):H01L21/18;H01L21/825 |
主分类号 |
G02B6/124 |
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