SEMICONDUCTOR LASER DEVICE, METHOD FOR PRODUCING THE SAME, AND OPTICAL DISK DEVICE

摘要

A semiconductor laser device (10) includes a resonator (12) in which a quantum well active layer (11) comprising a barrier layer made of gallium nitride and a well layer made of indium gallium nitride is sandwiched vertically between light guide layers made of at least n- and p-type aluminum gallium nitrides. The output face (10a) and the reflection face (10b) opposed to the output face of the resonator (12) each have a face reflecting film (13). The face reflecting film (13) comprises unit reflecting films (130) each constituted of a low reflectance film (13a) made of silicon oxide and a high reflectance film (13b) made of niobium oxide, both formed in order on the face of the resonator (12).