发明名称 PHOTOMASK INCLUDING HARDENED PHOTORESIST
摘要 <p>A method for fabricating a photomask processes photoresist on the photomask into a hardened material that is not stripped off but rather becomes an optical and structural component of the photomask. As such, the photoresist optically defines the dimension of critical features. This eliminates the dimensional uncertainty that arises from etching of underlying opaque materials such as chrome. The photoresist's thickness and optical transmission can be selected to allow a phase shift of transmitted light so that the photomask is a phasemask. The hardened photomask can be formed directly on a transparent substrate, for example, using optical pattern generation, without an intervening opaque material between the photoresist and the substrate.</p>
申请公布号 WO2001040877(A1) 申请公布日期 2001.06.07
申请号 US2000027478 申请日期 2000.10.04
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