发明名称 Gate array and manufacturing method of semiconductor integrated circuit using gate array
摘要 In a gate array, a gate length is measured by dividing gate electrodes into groups according to their materials to distinguish between those groups. The shape of a contact pad portion (5) of a gate electrode (4) differs according to the groups. A difference described here appears as shape such as cutouts (6a-6c) or projections (6d-6f), which is distinguishable by a scanning electron microscope, for example.
申请公布号 US2001003052(A1) 申请公布日期 2001.06.07
申请号 US20000741340 申请日期 2000.12.21
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MAEDA SHIGENOBU
分类号 H01L21/82;H01L27/118;(IPC1-7):H01L21/66;G01R31/26;H01L21/320;H01L21/476 主分类号 H01L21/82
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