发明名称 ENHANCED PLASMA MODE AND SYSTEM FOR PLASMA IMMERSION ION IMPLANTATION
摘要 A novel plasma treatment system (200). The plasma treatment system has a chamber (14), where a vacuum is maintained. The system also has a susceptor disposed within an interior region in the chamber. The susceptor (i.e., electrostatic chuck) is adapted to secure a work piece thereon. The system has an rf source (40) disposed overlying the susceptor. The rf source provides an inductive discharge to form a plasma from a gas within the chamber. Magnetic sources (207), (209) are selectively applied to the plasma discharge. In a specific embodiment, a first magnetic source (207) is disposed surrounding the susceptor in the chamber. The first magnetic source provides focused magnetic field lines toward the susceptor. A second magnetic source (209) is disposed surrounding the susceptor, where the second magnetic source provides focussed magnetic field lines toward the susceptor. The combination of the rf source and the magnetic sources form a plasma discharge that is shaped as a "cusp" which focuses the plasma discharge.
申请公布号 US2001002584(A1) 申请公布日期 2001.06.07
申请号 US19980201946 申请日期 1998.12.01
申请人 LIU WEI;BRYAN MICHAEL A.;ROTH IAN S. 发明人 LIU WEI;BRYAN MICHAEL A.;ROTH IAN S.
分类号 C23C14/48;H01J37/32;(IPC1-7):C23C16/00 主分类号 C23C14/48
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