| 摘要 |
<p>A process for fabricating a gate oxide of a vertical transistor. In a first step, a trench is formed in a substrate, the trench extending from a top surface of the substrate and having a trench bottom and a trench side wall. The trench side wall comprises a (100) crystal plane and a (110) crystal plane. Next, a sacrificial layer having a uniform thickness is formed on the trench side wall. Following formation of the sacrificial layer, nitrogen ions are implanted through the sacrificial layer such that the nitrogen ions are implanted into the (110) crystal plane of the trench side wall, but not into the (100) crystal plane of the trench side wall. The sacrificial layer is then removed and the trench side wall is oxidized to form the gate oxide.</p> |
