发明名称 |
SINGLE WAFER ANNEALING OVEN |
摘要 |
A heating apparatus for isothermally distributing a temperature across a semiconductor device or wafer during processing. The invention includes a chamber configured to receive a single semiconductor wafer. Housed within the chamber is a heating member or heating plate. Disposed on a periphery of the heating member is a heat source. Heat energy radiating from the heat source conducts through the heating member to create an isothermal temperature distribution across the heating member. Wafer supports are included on the heating plate which support the wafer in close proximity to the heating plate, such that the temperature of the heating plate establishes the temperature of the wafer. Advantageously, this configuration permits the temperature to be uniformly and isothermally distributed over the wafer.
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申请公布号 |
WO0141195(A1) |
申请公布日期 |
2001.06.07 |
申请号 |
WO2000US32553 |
申请日期 |
2000.11.29 |
申请人 |
WAFERMASTERS, INCORPORATED |
发明人 |
YOO, WOO, SIK |
分类号 |
H01L21/324;C30B31/12;H01L21/00;H01L21/26;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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