发明名称 |
Method for the formation of a planarizing coating film on substrate surface |
摘要 |
A method is disclosed for the formation of a planarizing coating film on the surface of a substrate having a stepped level difference under processing for the manufacture of semiconductor devices. The inventive method capable of giving a planarizing coating film of excellent planarity and good adhesion to the substrate surface comprises the steps of: (a) coating the substrate surface with a coating solution containing, as a film-forming solute uniformly dissolved in an organic solvent, a nitrogen-containing organic compound such as benzoguanamine and melamine having, in a molecule, at least two amino and/or imino groups each substituted for the nitrogen-bonded hydrogen atom by a hydroxyalkyl group or an alkoxyalkyl group to form a coating layer; (b) drying the coating layer by evaporating the organic solvent to form a dried coating layer; and (c) subjecting the dried coating layer to a baking treatment at a temperature in the range from 150 to 250° C.
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申请公布号 |
US2001003068(A1) |
申请公布日期 |
2001.06.07 |
申请号 |
US20010765276 |
申请日期 |
2001.01.22 |
申请人 |
IGUCHI ETSUKO;HIROSAKI TAKAKO;KOBAYASHI MASAKAZU |
发明人 |
IGUCHI ETSUKO;HIROSAKI TAKAKO;KOBAYASHI MASAKAZU |
分类号 |
C09D161/26;H01L21/312;H01L21/768;H01L23/522;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C09D161/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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