Semiconductor device production comprises growing polysilicon film on surface of silicon wafer, and wet etching using mixture of ammonia water, hydrogen peroxide water and pure water

摘要

Production of a semiconductor device comprises growing a polysilicon film on the surface of a silicon wafer; and wet etching the film using a mixture of ammonia water, hydrogen peroxide water and pure water. Independent claims are also included for alternative processes for the production of the semiconductor device. Preferred Features: The temperature of the etching mixture is controlled.