| 摘要 |
<p>Electrophotographic X-ray recording material comprises oxygen-modified selenium photoconductor layer, obtained by heating selenium before its precipitation on a carrier heated to 45-60 degrees C, in the presence of oxygen at 130-300 degrees C. esp 130 degrees C. Resistance is increased from 1013 to 1015 ohm.cm. Homogeneity of layer and uniformity of sensitivity are improved. Stable layers of a thickness of 30-300 mu can be obtained.</p> |
