| 发明名称 |
GATE DIELECTRICS AND METHOD OF MAKING WITH BINARY NON-CRYSTALINE ANALOGS OF SILICON DIOXIDE |
| 摘要 |
A non-crystalline oxide is represented by the formula: ABO4 wherein A is an element selected from Group IIIA of the periodic table; and B is an element selected from Group VB of the periodic table.
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| 申请公布号 |
WO0133619(A8) |
申请公布日期 |
2001.06.07 |
| 申请号 |
WO2000US41608 |
申请日期 |
2000.10.25 |
| 申请人 |
NORTH CAROLINA STATE UNIVERSITY;LUCOVSKY, GERALD |
发明人 |
LUCOVSKY, GERALD |
| 分类号 |
C01G31/00;C01G33/00;C01G35/00;C23C16/40;H01L21/02;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/265;H01L21/336;H01L21/823;H01L21/476 |
主分类号 |
C01G31/00 |
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