| 发明名称 |
A semiconductor memory device and a manufacturing method of the same |
| 摘要 |
<p>A memory cell of an SRAM prevents imbalance between GND potentials of a pair of driver transistors. In the memory cell, the driver transistors Q1 and Q2 in a pair have the common source region (9). <IMAGE></p> |
| 申请公布号 |
EP0593865(B1) |
申请公布日期 |
2001.06.06 |
| 申请号 |
EP19930112399 |
申请日期 |
1993.08.03 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KURIYAMA, HIROTADA |
| 分类号 |
H01L21/8244;H01L27/11;(IPC1-7):H01L27/11;H01L21/82 |
主分类号 |
H01L21/8244 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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