发明名称 |
Method of forming copper/copper alloy interconnection with reduced electromigration |
摘要 |
The electromigration of a Cu or Cu alloy interconnection member is reduced by annealing the seed layer before electroplating or electroless plating the Cu or Cu alloy interconnection member on the seed layer. Embodiments include depositing a Cu or Cu alloy seed layer, annealing at about 100° C. to about 400° C. to increase the grain size of the seed layer and impart a (111)-dominant crystallographic option before plating the Cu or Cu alloy interconnect member thereon the seed layer
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申请公布号 |
US6242349(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US19980207680 |
申请日期 |
1998.12.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NOGAMI TAKESHI;LOPATIN SERGEY;JOO YOUNG-CHANG |
分类号 |
H01L21/768;H05K1/03;H05K3/38;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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