| 摘要 |
PURPOSE: A method for manufacturing a gate of a semiconductor device is provided to easily obtain a titanium silicide layer of a stable state after a heat treatment process and to effective prevent a void defect inside the titanium silicide layer, by additionally forming a material to fill a void inside the titanium silicide layer. CONSTITUTION: A titanium silicide layer is divided into two layers. A layer for preventing a void defect is interposed between the two titanium silicide layers to fill a void inside the titanium silicide layer. The layer for preventing the void defect is composed of a polysilicon layer, a single crystal silicon layer, a titanium layer, a stacked layer of a polysilicon layer/a titanium layer or a stacked layer of the first titanium layer/a polysilicon layer/the second titanium layer.
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