Process for fabricating double recess pseudomorphic high electron mobility transistor structures

摘要

The invention is a method for fabricating a pseudomorphic HEMT transistor structure with a semiconductor layer having a 2DEG layer therein, a Schottky layer, a transition layer, and an ohmic contact layer on the transition layer. A double recess structure is disposed through the ohmic layer into the transition layer in which one or two layers of INYGa1-YAs are used as etch-stop layers to define the depth of the recess(es).