METHOD FOR MANUFACTURING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to make a polysilicon layer and a titanium silicide layer maintain the same re-oxidation rate, by performing an annealing process using inert gas such as argon before re-oxidizing the gate electrode composed of the polysilicon layer and the titanium silicide layer. CONSTITUTION: A gate oxide layer(12) and a polysilicon layer(13) are stacked on a semiconductor substrate(11). A titanium silicide layer of an amorphous state is deposited on the polysilicon layer. The amorphous titanium silicide layer is transformed to a crystal state by a heat treatment process. The titanium silicide layer, the polysilicon layer and the gate oxide layer are patterned to form a gate electrode by using a hard mask. The resultant structure having the gate electrode is annealed in an inert gas atmosphere. The gate electrode is re-oxidized.